| 000 | 00753nam a2200217 i 4500 | ||
|---|---|---|---|
| 001 | 23883 | ||
| 005 | 20170214082219.0 | ||
| 010 | _a978-1-4020-4367-3 | ||
| 090 | _a23883 | ||
| 100 | _a20081010d2006 0pory50 ba | ||
| 200 | 1 |
_aDefects in high-k gate dielectric stacks _bDocumento electrónico _e nano-electronic semiconductor devices _fEvgeni Gusev |
|
| 210 |
_aDordrecht _cSpringer _d2006 |
||
| 215 | _aE-book | ||
| 225 | 1 |
_aNATO Science Series II _iMathematics, Physics and Chemistry _v220 |
|
| 300 | _aAcesso ao documento electrónico no ISEL | ||
| 606 |
_910390 _aEngenharia |
||
| 675 | _a62 | ||
| 700 | 1 |
_aGUSEV _bEvgeni _911792 |
|
| 852 |
_aISEL _bBiblioteca Central |
||
| 856 |
_uhttp://www.springerlink.com/content/p01732/ _zAcesso online |
||
| 942 | _cEBO | ||